Model No. | MMEPU-532-30 |
Optical Characteristics | |
Wavelength (nm) | 532nm |
Average Power (W) | >30W@60kHz |
Single Pulse Energy (uJ) | ~500uJ@60kHz |
Pulse Width (ns) | 20ns@60kHz |
Repitition Rate | 50kHz-500kHz |
Pulse Stability | <3% rms |
Long Term Stability | <±3% |
Beam Characteristics | |
Polarization Ratio | Vertical; >100:1 |
Beam Diameter | 6mm(Built in beam expander) |
Beam Circularity | >90% |
Spatial Mode | TEM00, M² <1.3 |
Operating Specifications | |
Warm-up Time | <15 minutes from cold start |
Electrical Requirement | DC24V, 350W |
Ambient Temperature | 10-35℃, RH<80% |
Storage Conditions | -10-40℃,RH<90% |
Physical Characteristics | |
Cooling System | Water-Cooled |
Water Temperature (laser inlet) | 25℃ |
MMEPU-532-30
It has excellent power stability to ensure long time operation and high single pulse energy to generate higher energy density in a short time to better cope with hard materials such as silicon carbide.
Features:
- Adopt UV-clean patented technology to solve power attenuation, worry- free use;
- The service life exceeds 20000 hours, maintenance free and regular commissioning is not required;
- Excellent beam quality M²< 1.3, simple process and higher efficiency;
- 3-layer protection, protection grade IP65, more suitable for harsh working environment;
- Rugged, easy to install and easy to integrate.
Application:
- Wafer annealing
- Wafer drilling and dicing