MMEPU-532-30

It has excellent power stability to ensure long time operation and high single pulse energy to generate higher energy density in a short time to better cope with hard materials such as silicon carbide.

Features:

  • Adopt UV-clean patented technology to solve power attenuation, worry- free use;
  • The service life exceeds 20000 hours, maintenance free and regular commissioning is not required;
  • Excellent beam quality M²< 1.3, simple process and higher efficiency;
  • 3-layer protection, protection grade IP65, more suitable for harsh working environment;
  • Rugged, easy to install and easy to integrate.

Application:

  • Wafer annealing
  • Wafer drilling and dicing
Categories: ,

Description

Model No. MMEPU-532-30
Optical Characteristics
Wavelength (nm) 532nm
Average Power (W) >30W@60kHz
Single Pulse Energy (uJ) ~500uJ@60kHz
Pulse Width (ns) 20ns@60kHz
Repitition Rate 50kHz-500kHz
Pulse Stability <3% rms
Long Term Stability <±3%
Beam Characteristics
Polarization Ratio Vertical; >100:1
Beam Diameter 6mm(Built in beam expander)
Beam Circularity >90%
Spatial Mode TEM00, M² <1.3
Operating Specifications
Warm-up Time <15 minutes from cold start
Electrical Requirement DC24V, 350W
Ambient Temperature 10-35℃, RH<80%
Storage Conditions -10-40℃,RH<90%
Physical Characteristics
Cooling System Water-Cooled
Water Temperature (laser inlet) 25℃

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Application Case
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